Справочник MOSFET. NCE65NF099T

 

NCE65NF099T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65NF099T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 346 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 96 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: TO-247
     - подбор MOSFET транзистора по параметрам

 

NCE65NF099T Datasheet (PDF)

 ..1. Size:856K  ncepower
 nce65nf099t.pdf pdf_icon

NCE65NF099T

NCE65NF099TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

 4.1. Size:726K  ncepower
 nce65nf099ll.pdf pdf_icon

NCE65NF099T

NCE65NF099LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, A

 4.2. Size:709K  ncepower
 nce65nf099d.pdf pdf_icon

NCE65NF099T

NCE65NF099DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

 4.3. Size:709K  ncepower
 nce65nf099v.pdf pdf_icon

NCE65NF099T

NCE65NF099VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

ПОКАЗАТЬ ЕЩЁ

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History: AP30T10GK | VBZM20P06 | 2SK3521-01S | SM6012NSK | STP3NB100 | ELM36400EA | AP75N07GI-HF

 

 
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