All MOSFET. NCE65NF190V Datasheet

 

NCE65NF190V Datasheet and Replacement


   Type Designator: NCE65NF190V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 194 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: DFN8X8
 

 NCE65NF190V substitution

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NCE65NF190V Datasheet (PDF)

 ..1. Size:688K  ncepower
 nce65nf190v.pdf pdf_icon

NCE65NF190V

NCE65NF190VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri

 4.1. Size:717K  ncepower
 nce65nf190ll.pdf pdf_icon

NCE65NF190V

NCE65NF190LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industr

 4.2. Size:711K  ncepower
 nce65nf190k.pdf pdf_icon

NCE65NF190V

NCE65NF190KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri

 4.3. Size:725K  ncepower
 nce65nf190f.pdf pdf_icon

NCE65NF190V

NCE65NF190FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri

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Datasheet: NCE65NF099T , NCE65NF099V , NCE65NF190 , NCE65NF190D , NCE65NF190F , NCE65NF190K , NCE65NF190LL , NCE65NF190T , IRFZ24N , NCE65T130T , NCE65T180V , NCE65T1K9I , NCE65T1K9K , NCE65TF078T , NCE6602N , NCE6890D , NCE70H10F .

History: SPB03N60S5 | JCS2N70RH

Keywords - NCE65NF190V MOSFET datasheet

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