NCE65NF190V Specs and Replacement

Type Designator: NCE65NF190V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 194 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: DFN8X8

NCE65NF190V substitution

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NCE65NF190V datasheet

 ..1. Size:688K  ncepower
 nce65nf190v.pdf pdf_icon

NCE65NF190V

NCE65NF190V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri... See More ⇒

 4.1. Size:717K  ncepower
 nce65nf190ll.pdf pdf_icon

NCE65NF190V

NCE65NF190LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industr... See More ⇒

 4.2. Size:711K  ncepower
 nce65nf190k.pdf pdf_icon

NCE65NF190V

NCE65NF190K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri... See More ⇒

 4.3. Size:725K  ncepower
 nce65nf190f.pdf pdf_icon

NCE65NF190V

NCE65NF190F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri... See More ⇒

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Detailed specifications: NCE65NF099T, NCE65NF099V, NCE65NF190, NCE65NF190D, NCE65NF190F, NCE65NF190K, NCE65NF190LL, NCE65NF190T, STF13NM60N, NCE65T130T, NCE65T180V, NCE65T1K9I, NCE65T1K9K, NCE65TF078T, NCE6602N, NCE6890D, NCE70H10F

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