NCE65NF190V - описание и поиск аналогов

 

NCE65NF190V. Аналоги и основные параметры

Наименование производителя: NCE65NF190V

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 194 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 17 ns

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: DFN8X8

Аналог (замена) для NCE65NF190V

- подборⓘ MOSFET транзистора по параметрам

 

NCE65NF190V даташит

 ..1. Size:688K  ncepower
 nce65nf190v.pdf pdf_icon

NCE65NF190V

NCE65NF190V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri

 4.1. Size:717K  ncepower
 nce65nf190ll.pdf pdf_icon

NCE65NF190V

NCE65NF190LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industr

 4.2. Size:711K  ncepower
 nce65nf190k.pdf pdf_icon

NCE65NF190V

NCE65NF190K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri

 4.3. Size:725K  ncepower
 nce65nf190f.pdf pdf_icon

NCE65NF190V

NCE65NF190F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE65NF099T , NCE65NF099V , NCE65NF190 , NCE65NF190D , NCE65NF190F , NCE65NF190K , NCE65NF190LL , NCE65NF190T , STF13NM60N , NCE65T130T , NCE65T180V , NCE65T1K9I , NCE65T1K9K , NCE65TF078T , NCE6602N , NCE6890D , NCE70H10F .

 

 

 


 
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