NCE65TF078T Datasheet. Specs and Replacement

Type Designator: NCE65TF078T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO-247

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NCE65TF078T datasheet

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NCE65TF078T

NCE65TF078T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 62 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 45 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 65 nC power conversion, and industria... See More ⇒

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NCE65TF078T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu... See More ⇒

 6.2. Size:1480K  ncepower
 nce65tf099d.pdf pdf_icon

NCE65TF078T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu... See More ⇒

 6.3. Size:578K  ncepower
 nce65tf099d nce65tf099 nce65tf099f.pdf pdf_icon

NCE65TF078T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 38 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a... See More ⇒

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Detailed specifications: NCE65NF190K, NCE65NF190LL, NCE65NF190T, NCE65NF190V, NCE65T130T, NCE65T180V, NCE65T1K9I, NCE65T1K9K, IRF730, NCE6602N, NCE6890D, NCE70H10F, NCE70N100I, NCE70N1K1D, NCE70N1K1F, NCE70N1K1I, NCE70N1K1K

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