All MOSFET. NCE65TF078T Datasheet

 

NCE65TF078T Datasheet and Replacement


   Type Designator: NCE65TF078T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO-247
 

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NCE65TF078T Datasheet (PDF)

 ..1. Size:871K  ncepower
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NCE65TF078T

NCE65TF078TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 62 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria

 6.1. Size:1480K  ncepower
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NCE65TF078T

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 6.2. Size:1480K  ncepower
nce65tf099d.pdf pdf_icon

NCE65TF078T

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 6.3. Size:578K  ncepower
nce65tf099d nce65tf099 nce65tf099f.pdf pdf_icon

NCE65TF078T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a

Datasheet: NCE65NF190K , NCE65NF190LL , NCE65NF190T , NCE65NF190V , NCE65T130T , NCE65T180V , NCE65T1K9I , NCE65T1K9K , IRF520 , NCE6602N , NCE6890D , NCE70H10F , NCE70N100I , NCE70N1K1D , NCE70N1K1F , NCE70N1K1I , NCE70N1K1K .

History: CS7N60F | MIC94052BC6TR | PMT21EN | GSM9435WS | IPP65R660CFD | MTN3023J3 | VBZE20P03

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