NCE6602N MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE6602N
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 1.5 nS
Cossⓘ - Output Capacitance: 38 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: SOT23-6L
NCE6602N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE6602N Datasheet (PDF)
nce6602n.pdf
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http://www.ncepower.com NCE6602NNCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-channel P-channel N-Channel Schematic diagram VDS = 30V,ID = 3.5A RDS(ON
nce6602.pdf
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Pb Free Producthttp://www.ncepower.com NCE6602NCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-channel P-channel N-Channel Schematic diagram VDS = 30V,I
nce6602.pdf
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NCE6602www.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at VG
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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