NCE6602N Specs and Replacement
Type Designator: NCE6602N
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1.5 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: SOT23-6L
NCE6602N substitution
- MOSFET ⓘ Cross-Reference Search
NCE6602N datasheet
nce6602n.pdf
http //www.ncepower.com NCE6602N NCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-channel P-channel N-Channel Schematic diagram VDS = 30V,ID = 3.5A RDS(ON... See More ⇒
nce6602.pdf
Pb Free Product http //www.ncepower.com NCE6602 NCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-channel P-channel N-Channel Schematic diagram VDS = 30V,I... See More ⇒
nce6602.pdf
NCE6602 www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at VG... See More ⇒
Detailed specifications: NCE65NF190LL, NCE65NF190T, NCE65NF190V, NCE65T130T, NCE65T180V, NCE65T1K9I, NCE65T1K9K, NCE65TF078T, AO3400A, NCE6890D, NCE70H10F, NCE70N100I, NCE70N1K1D, NCE70N1K1F, NCE70N1K1I, NCE70N1K1K, NCE70N1K1R
Keywords - NCE6602N MOSFET specs
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