NCE6602N Datasheet and Replacement. Cross Reference Search

NCE6602N Datasheet (PDF)

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http://www.ncepower.com NCE6602NNCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-channel P-channel N-Channel Schematic diagram VDS = 30V,ID = 3.5A RDS(ON

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Pb Free Producthttp://www.ncepower.com NCE6602NCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features N-channel P-channel N-Channel Schematic diagram VDS = 30V,I

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NCE6602www.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at VG

Datasheet: NCE65NF190LL , NCE65NF190T , NCE65NF190V , NCE65T130T , NCE65T180V , NCE65T1K9I , NCE65T1K9K , NCE65TF078T , RU6888R , NCE6890D , NCE70H10F , NCE70N100I , NCE70N1K1D , NCE70N1K1F , NCE70N1K1I , NCE70N1K1K , NCE70N1K1R .