FQB11P06 PDF and Equivalents Search

 

FQB11P06 Specs and Replacement

Type Designator: FQB11P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 11.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm

Package: TO263 D2PAK

FQB11P06 substitution

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FQB11P06 datasheet

 ..1. Size:971K  fairchild semi
fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdf pdf_icon

FQB11P06

October 2008 QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been espec... See More ⇒

 ..2. Size:1032K  onsemi
fqb11p06.pdf pdf_icon

FQB11P06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:970K  fairchild semi
fqb11n40ctm.pdf pdf_icon

FQB11P06

October 2008 QFET FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especia... See More ⇒

 9.2. Size:972K  fairchild semi
fqb11n40c.pdf pdf_icon

FQB11P06

November 2013 FQB11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 m Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 5.25 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tai... See More ⇒

Detailed specifications: FQA90N15F109, FQA9N90F109, FQA9N90CF109, FQA9P25, FQAF11N90C, FQAF13N80, SDD06N70, FQAF16N50, AON7403, FQB12P20, FQB19N20, SDD05N70, FQB19N20C, SDD05N04, FQB19N20L, SDD04N65, FQB1P50

Keywords - FQB11P06 MOSFET specs

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