FQB11P06 Specs and Replacement
Type Designator: FQB11P06
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 11.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
FQB11P06 substitution
- MOSFET ⓘ Cross-Reference Search
FQB11P06 datasheet
fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdf
October 2008 QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been espec... See More ⇒
fqb11p06.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fqb11n40ctm.pdf
October 2008 QFET FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especia... See More ⇒
fqb11n40c.pdf
November 2013 FQB11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 m Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 5.25 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tai... See More ⇒
Detailed specifications: FQA90N15F109, FQA9N90F109, FQA9N90CF109, FQA9P25, FQAF11N90C, FQAF13N80, SDD06N70, FQAF16N50, AON7403, FQB12P20, FQB19N20, SDD05N70, FQB19N20C, SDD05N04, FQB19N20L, SDD04N65, FQB1P50
Keywords - FQB11P06 MOSFET specs
FQB11P06 cross reference
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FQB11P06 replacement
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