FQB11P06 - описание и поиск аналогов

 

FQB11P06. Аналоги и основные параметры

Наименование производителя: FQB11P06

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 53 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11.4 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.175 Ohm

Тип корпуса: TO263 D2PAK

Аналог (замена) для FQB11P06

- подборⓘ MOSFET транзистора по параметрам

 

FQB11P06 даташит

 ..1. Size:971K  fairchild semi
fqb11p06tm fqb11p06 fqi11p06 fqi11p06tu.pdfpdf_icon

FQB11P06

October 2008 QFET FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been espec

 ..2. Size:1032K  onsemi
fqb11p06.pdfpdf_icon

FQB11P06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:970K  fairchild semi
fqb11n40ctm.pdfpdf_icon

FQB11P06

October 2008 QFET FQB11N40C/FQI11N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especia

 9.2. Size:972K  fairchild semi
fqb11n40c.pdfpdf_icon

FQB11P06

November 2013 FQB11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 m Description Features These N-Channel enhancement mode power field effect 10.5 A, 400V, RDS(on) = 530 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 5.25 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tai

Другие MOSFET... FQA90N15F109 , FQA9N90F109 , FQA9N90CF109 , FQA9P25 , FQAF11N90C , FQAF13N80 , SDD06N70 , FQAF16N50 , AON7403 , FQB12P20 , FQB19N20 , SDD05N70 , FQB19N20C , SDD05N04 , FQB19N20L , SDD04N65 , FQB1P50 .

 

 

 

 

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