FQB12P20 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB12P20
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 11.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
Package: TO263 D2PAK
FQB12P20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB12P20 Datasheet (PDF)
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Datasheet: FQA9N90F109 , FQA9N90CF109 , FQA9P25 , FQAF11N90C , FQAF13N80 , SDD06N70 , FQAF16N50 , FQB11P06 , IPSA70R360P7S , FQB19N20 , SDD05N70 , FQB19N20C , SDD05N04 , FQB19N20L , SDD04N65 , FQB1P50 , FQB22P10 .
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