Справочник MOSFET. FQB12P20

 

FQB12P20 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQB12P20
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm
   Тип корпуса: TO263 D2PAK

 Аналог (замена) для FQB12P20

 

 

FQB12P20 Datasheet (PDF)

 ..1. Size:1014K  fairchild semi
 fqb12p20 fqi12p20.pdf

FQB12P20 FQB12P20

October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe

 ..2. Size:309K  onsemi
 fqb12p20.pdf

FQB12P20 FQB12P20

MOSFET P-Channel, QFET)-200 V, -11.5 A, 470 mWFQB12P20General DescriptionThese P-Channel enhancement mode power field effect transistorswww.onsemi.comare produced using ON Semiconductors proprietary, planar stripe,DMOS technology.This advanced technology has been especially tailored to minimizeVDSS RDS(ON) MAX ID MAXon-state resistance, provide superior switching perf

 0.1. Size:979K  fairchild semi
 fqb12p20tm.pdf

FQB12P20 FQB12P20

October 2008QFETFQB12P20 / FQI12P20200V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -200V, RDS(on) = 0.47 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been espe

 8.1. Size:634K  fairchild semi
 fqb12p10tm.pdf

FQB12P20 FQB12P20

TMQFETFQB12P10 / FQI12P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailo

 9.1. Size:540K  fairchild semi
 fqb12n60tm am002 fqi12n60tu.pdf

FQB12P20 FQB12P20

April 2000TMQFETQFETQFETQFETFQB12N60 / FQI12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10.5A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technolo

 9.2. Size:616K  fairchild semi
 fqb12n50tm am002 fqi12n50tu.pdf

FQB12P20 FQB12P20

TMQFETFQB12N50 / FQI12N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.1A, 500V, RDS(on) = 0.49 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 39 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored

 9.3. Size:821K  fairchild semi
 fqb12n60ctm fqi12n60ctu.pdf

FQB12P20 FQB12P20

September 2007 QFETFQB12N60C / FQI12N60C600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especially

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top