NCE70T260I
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE70T260I
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 131
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24.7
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 74
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29
Ohm
Package:
TO-251
NCE70T260I
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE70T260I
Datasheet (PDF)
..1. Size:485K ncepower
nce70t260i nce70t260k.pdf 
NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
..2. Size:485K ncepower
nce70t260i.pdf
NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
5.1. Size:1763K ncepower
nce70t260f.pdf
NCE70T260D,NCE70T260,NCE70T260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indust
5.2. Size:612K ncepower
nce70t260d nce70t260 nce70t260f.pdf
NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
5.3. Size:1763K ncepower
nce70t260.pdf
NCE70T260D,NCE70T260,NCE70T260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indust
5.4. Size:485K ncepower
nce70t260k.pdf
NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
5.5. Size:1763K ncepower
nce70t260t.pdf
NCE70T260D,NCE70T260,NCE70T260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indust
5.6. Size:1763K ncepower
nce70t260f nce70t260 nce70t260d.pdf
NCE70T260D,NCE70T260,NCE70T260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indust
5.7. Size:1763K ncepower
nce70t260d.pdf
NCE70T260D,NCE70T260,NCE70T260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indust
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