NCE70T260I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE70T260I
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 131 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 24.7 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 74 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.29 Ohm
Тип корпуса: TO-251
Аналог (замена) для NCE70T260I
NCE70T260I Datasheet (PDF)
nce70t260i nce70t260k.pdf
NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t260d nce70t260 nce70t260f.pdf
NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce70t260t.pdf
NCE70T260D,NCE70T260,NCE70T260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indust
nce70t260f nce70t260 nce70t260d.pdf
NCE70T260D,NCE70T260,NCE70T260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indust
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: LSH65R380GT | JCS4N60VB
