NCE70T680I Specs and Replacement

Type Designator: NCE70T680I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm

Package: TO-251

NCE70T680I substitution

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NCE70T680I datasheet

 ..1. Size:491K  ncepower
 nce70t680i.pdf pdf_icon

NCE70T680I

NCE70T680I NCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

 ..2. Size:491K  ncepower
 nce70t680i nce70t680k.pdf pdf_icon

NCE70T680I

NCE70T680I NCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

 5.1. Size:610K  ncepower
 nce70t680 nce70t680f.pdf pdf_icon

NCE70T680I

NCE70T680D,NCE70T680,NCE70T680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 5.2. Size:491K  ncepower
 nce70t680k.pdf pdf_icon

NCE70T680I

NCE70T680I NCE70T680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

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Detailed specifications: NCE70N900R, NCE70T1K2F, NCE70T260I, NCE70T260K, NCE70T260T, NCE70T540, NCE70T540D, NCE70T540F, IRFB4227, NCE70T680K, NCE70T900R, NCE72R60D, NCE75H21, NCE75H21D, NCE75H21T, NCE75H25, NCE75H25T

Keywords - NCE70T680I MOSFET specs

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