All MOSFET. NCE70T900R Datasheet

 

NCE70T900R Datasheet and Replacement


   Type Designator: NCE70T900R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SOT-223
 

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NCE70T900R Datasheet (PDF)

 ..1. Size:404K  ncepower
 nce70t900r.pdf pdf_icon

NCE70T900R

NCE70T900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

 5.1. Size:707K  ncepower
 nce70t900 nce70t900f.pdf pdf_icon

NCE70T900R

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.2. Size:439K  ncepower
 nce70t900i.pdf pdf_icon

NCE70T900R

NCE70T900INCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.3. Size:707K  ncepower
 nce70t900f.pdf pdf_icon

NCE70T900R

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

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Datasheet: NCE70T260I , NCE70T260K , NCE70T260T , NCE70T540 , NCE70T540D , NCE70T540F , NCE70T680I , NCE70T680K , IRFB4227 , NCE72R60D , NCE75H21 , NCE75H21D , NCE75H21T , NCE75H25 , NCE75H25T , NCE75H35TC , NCE8290 .

History: RFP14N06 | SVS7N60DD2TR | FTB07N08N | P3606BEA | SH8M11 | NCE65N760K | UPA1913

Keywords - NCE70T900R MOSFET datasheet

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