All MOSFET. NCE70T900R Datasheet

 

NCE70T900R MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE70T900R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SOT-223

 NCE70T900R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE70T900R Datasheet (PDF)

 ..1. Size:404K  ncepower
nce70t900r.pdf

NCE70T900R NCE70T900R

NCE70T900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

 5.1. Size:707K  ncepower
nce70t900 nce70t900f.pdf

NCE70T900R NCE70T900R

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super VDS 700 V junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 Aindustrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.2. Size:609K  ncepower
nce70t900d nce70t900 nce70t900f.pdf

NCE70T900R NCE70T900R

NCE70T900DNCE70T900, NCE70T900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) RDS(ON)TYP 820 m with low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.3. Size:484K  ncepower
nce70t900i nce70t900k.pdf

NCE70T900R NCE70T900R

NCE70T900INCE70T900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top