NCE8736 Datasheet and Replacement
Type Designator: NCE8736
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 429 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SOP8
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NCE8736 Datasheet (PDF)
nce8736.pdf

NCE8736http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8736 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =21A Schematic diagram RDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SJ553S | SL2343 | AO4405E | BUK9Y15-100E | IPI50N12S3L-15 | SUP90N03-03 | NCEP01T25T
Keywords - NCE8736 MOSFET datasheet
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History: 2SJ553S | SL2343 | AO4405E | BUK9Y15-100E | IPI50N12S3L-15 | SUP90N03-03 | NCEP01T25T



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