NCEA01P13K Datasheet and Replacement
Type Designator: NCEA01P13K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 52 nS
Cossⓘ - Output Capacitance: 44 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO252
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NCEA01P13K Datasheet (PDF)
ncea01p13k.pdf

NCEA01P13Khttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA01P13K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General FeaturesSchematic diagram V =-100V,I =-13ADS DR
ncea0130ag.pdf

http://www.ncepower.comNCEA0130AGNCE Automotive N-Channel Enhancement Mode Power MOSFET (Primary)General Features V = 100V,I =36ADescription DS DThe NCEA0130AG uses advanced trench technology and R
ncea02p20k.pdf

http://www.ncepower.comNCEA02P20KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA02P20K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General FeaturesSchematic diagram V =-200V,I =-20ADS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - NCEA01P13K MOSFET datasheet
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History: GSM3030 | P0908AK



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