All MOSFET. NCEA2301 Datasheet

 

NCEA2301 Datasheet and Replacement


   Type Designator: NCEA2301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT-23
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NCEA2301 Datasheet (PDF)

 ..1. Size:598K  ncepower
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NCEA2301

http://www.ncepower.comNCEA2301NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.General Features V = -20V,I = -3ADS DR

 7.1. Size:623K  ncepower
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NCEA2301

http://www.ncepower.comNCEA2309NCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA2309 uses advanced trench technology and designto provide excellent R with low gate charge .This device isDS(ON)well suited for use as a load switch or in PWM applications.General Features V =-60V,I =-2.3ADS DR

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History: 2SK223 | CSD18531Q5A | JCS12N65CT | AP3403GJ | HM7N65F | CSD17308Q3 | 12N70KL-TQ2-T

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