NCEA2301 Specs and Replacement

Type Designator: NCEA2301

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: SOT-23

NCEA2301 substitution

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NCEA2301 datasheet

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NCEA2301

http //www.ncepower.com NCEA2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCEA2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -20V,I = -3A DS D R ... See More ⇒

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NCEA2301

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Detailed specifications: NCE85H25, NCE85H25T, NCE8736, NCE9435A, NCEA0130AG, NCEA01P13K, NCEA02P20K, NCEA15P30K, AON7410, NCEA4080K, NCEA40P25G, NCEA6042AG, NCEA6050KA, NCEA6058K, NCEA6080K, NCEA60ND08S, NCEA60ND18G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.