NCEA2301 Datasheet and Replacement
Type Designator: NCEA2301
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT-23
NCEA2301 substitution
NCEA2301 Datasheet (PDF)
ncea2301.pdf

http://www.ncepower.comNCEA2301NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.General Features V = -20V,I = -3ADS DR
ncea2309.pdf

http://www.ncepower.comNCEA2309NCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA2309 uses advanced trench technology and designto provide excellent R with low gate charge .This device isDS(ON)well suited for use as a load switch or in PWM applications.General Features V =-60V,I =-2.3ADS DR
Datasheet: NCE85H25 , NCE85H25T , NCE8736 , NCE9435A , NCEA0130AG , NCEA01P13K , NCEA02P20K , NCEA15P30K , RFP50N06 , NCEA4080K , NCEA40P25G , NCEA6042AG , NCEA6050KA , NCEA6058K , NCEA6080K , NCEA60ND08S , NCEA60ND18G .
History: SSF1N90D | SM6011NSF | FCAB21490L1 | IXFT30N40Q | PHD18NQ10T | H02N60SI | BUK9M17-30E
Keywords - NCEA2301 MOSFET datasheet
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History: SSF1N90D | SM6011NSF | FCAB21490L1 | IXFT30N40Q | PHD18NQ10T | H02N60SI | BUK9M17-30E



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