All MOSFET. NCEA4080K Datasheet

 

NCEA4080K Datasheet and Replacement


   Type Designator: NCEA4080K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 273 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252
 

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NCEA4080K Datasheet (PDF)

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 ncea4080k.pdf pdf_icon

NCEA4080K

http://www.ncepower.com NCEA4080KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA4080K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =40V,I =80ADS DR

 8.1. Size:356K  ncepower
 ncea40p25g.pdf pdf_icon

NCEA4080K

http://www.ncepower.comNCEA40P25GNCE Automotive P-Channel Enhancement Mode Power MOSFETGeneral Features V =-40V,I =-35A (Silicon Limited)DS DDescriptionR =11.5m (typical) @ V =10VDS(ON) GSThe NCEA40P25G uses uses advanced trench technology toR =18.5m (typical) @ V =4.5VDS(ON) GSprovide excellent R , This device is suitable for use as a loadDS(ON) High densi

Datasheet: NCE85H25T , NCE8736 , NCE9435A , NCEA0130AG , NCEA01P13K , NCEA02P20K , NCEA15P30K , NCEA2301 , 4N60 , NCEA40P25G , NCEA6042AG , NCEA6050KA , NCEA6058K , NCEA6080K , NCEA60ND08S , NCEA60ND18G , NCEA60P82AK .

History: 2SK949M | DMG8880LSS | C3M0065100K | CS65N20-30 | IXFV110N10P | IPB120N08S4-03 | SQM90142E

Keywords - NCEA4080K MOSFET datasheet

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