All MOSFET. NCEA6050KA Datasheet

 

NCEA6050KA Datasheet and Replacement


   Type Designator: NCEA6050KA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0192 Ohm
   Package: TO-252
 

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NCEA6050KA Datasheet (PDF)

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NCEA6050KA

http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR

 7.1. Size:900K  ncepower
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NCEA6050KA

http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR

 8.1. Size:811K  ncepower
 ncea60nd08s.pdf pdf_icon

NCEA6050KA

NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR

 8.2. Size:724K  ncepower
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NCEA6050KA

NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR

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History: DH045N06I | IPB34CN10N | FQD2N50TF | RFP8P08 | AO3495 | P2610BT | DMN3035LWN

Keywords - NCEA6050KA MOSFET datasheet

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