NCEA65NF036T MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEA65NF036T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 488 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 125 nC
trⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 263 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO-247
NCEA65NF036T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEA65NF036T Datasheet (PDF)
ncea65nf036t.pdf
NCEA65NF036TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for PF
ncea65nf036t4.pdf
NCEA65NF036T4N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for P
ncea6058k.pdf
http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR
ncea60nd08s.pdf
NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR
ncea6050ka.pdf
http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR
ncea60nd18g.pdf
NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR
ncea6080k.pdf
http://www.ncepower.comNCEA6080KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6080K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.Schematic diagramGeneral Features V =60V,I =80ADS DR
ncea60p82ak.pdf
NCEA60P82AKhttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA60P82AK uses advanced trench technology and designto provide excellent R with low gate charge .This device is wellDS(ON)suited for high current load applications.General FeaturesSchematic diagram V =-60V,I =-82ADS DR
ncea6042ag.pdf
http://www.ncepower.comNCEA6042AGNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =42ADS DDescriptionR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD