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NCEA65NF036T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEA65NF036T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 488 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 125 nC
   trⓘ - Время нарастания: 37 ns
   Cossⓘ - Выходная емкость: 263 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для NCEA65NF036T

 

 

NCEA65NF036T Datasheet (PDF)

 ..1. Size:849K  ncepower
 ncea65nf036t.pdf

NCEA65NF036T NCEA65NF036T

NCEA65NF036TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for PF

 0.1. Size:843K  ncepower
 ncea65nf036t4.pdf

NCEA65NF036T NCEA65NF036T

NCEA65NF036T4N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for P

 9.1. Size:900K  ncepower
 ncea6058k.pdf

NCEA65NF036T NCEA65NF036T

http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR

 9.2. Size:811K  ncepower
 ncea60nd08s.pdf

NCEA65NF036T NCEA65NF036T

NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR

 9.3. Size:1045K  ncepower
 ncea6050ka.pdf

NCEA65NF036T NCEA65NF036T

http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR

 9.4. Size:724K  ncepower
 ncea60nd18g.pdf

NCEA65NF036T NCEA65NF036T

NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR

 9.5. Size:929K  ncepower
 ncea6080k.pdf

NCEA65NF036T NCEA65NF036T

http://www.ncepower.comNCEA6080KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6080K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.Schematic diagramGeneral Features V =60V,I =80ADS DR

 9.6. Size:837K  ncepower
 ncea60p82ak.pdf

NCEA65NF036T NCEA65NF036T

NCEA60P82AKhttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA60P82AK uses advanced trench technology and designto provide excellent R with low gate charge .This device is wellDS(ON)suited for high current load applications.General FeaturesSchematic diagram V =-60V,I =-82ADS DR

 9.7. Size:623K  ncepower
 ncea6042ag.pdf

NCEA65NF036T NCEA65NF036T

http://www.ncepower.comNCEA6042AGNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =42ADS DDescriptionR

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