SDD04N65 Specs and Replacement
Type Designator: SDD04N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 54 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
SDD04N65 substitution
- MOSFET ⓘ Cross-Reference Search
SDD04N65 datasheet
sdu04n65 sdd04n65.pdf
Green SDU/D04N65 Product SamHop Microelectronics corp. Ver 2.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 650V 4A 2.5 @VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERING IN... See More ⇒
sdu04n60 sdd04n60.pdf
Green Product SDU/D04N60 a S mHop Microelectronics C orp. Ver 2.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 600V 4A 2.1 @ VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERIN... See More ⇒
Detailed specifications: FQAF16N50, FQB11P06, FQB12P20, FQB19N20, SDD05N70, FQB19N20C, SDD05N04, FQB19N20L, 60N06, FQB1P50, FQB22P10, FQB22P10TMF085, FQB25N33TMF085, FQB27P06, FQB30N06L, FQB33N10, SDD04N60
Keywords - SDD04N65 MOSFET specs
SDD04N65 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BRCS700P10DP | BTS282Z
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