All MOSFET. NCEAP020N10LL Datasheet

 

NCEAP020N10LL Datasheet and Replacement


   Type Designator: NCEAP020N10LL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 330 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TOLL
 

 NCEAP020N10LL substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCEAP020N10LL Datasheet (PDF)

 ..1. Size:747K  ncepower
nceap020n10ll.pdf pdf_icon

NCEAP020N10LL

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

 5.1. Size:542K  ncepower
nceap020n85ll.pdf pdf_icon

NCEAP020N10LL

NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga

 5.2. Size:967K  ncepower
nceap020n60gu.pdf pdf_icon

NCEAP020N10LL

http://www.ncepower.comNCEAP020N60GUNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230ADS Duniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate

 7.1. Size:793K  ncepower
nceap023n10ll.pdf pdf_icon

NCEAP020N10LL

NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM

Datasheet: NCEAP016N60VD , NCEAP016N85LL , NCEAP0178AK , NCEAP018N60AGU , NCEAP018N60GU , NCEAP018N85LL , NCEAP01ND35AG , NCEAP01P35AK , 7N60 , NCEAP020N85LL , NCEAP023N10LL , NCEAP025N60AG , NCEAP026N10T , NCEAP028N85D , NCEAP030N85LL , NCEAP035N85GU , NCEAP15ND10AG .

History: DMG8N65SCT | IXTH6N150 | ELM14430AA | RJK0629DPE | 2SK1976 | BSC026N04LS | DMG4511SK4

Keywords - NCEAP020N10LL MOSFET datasheet

 NCEAP020N10LL cross reference
 NCEAP020N10LL equivalent finder
 NCEAP020N10LL lookup
 NCEAP020N10LL substitution
 NCEAP020N10LL replacement

 

 
Back to Top

 


 
.