NCEAP020N10LL Specs and Replacement

Type Designator: NCEAP020N10LL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 330 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TOLL

NCEAP020N10LL substitution

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NCEAP020N10LL datasheet

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NCEAP020N10LL

NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g... See More ⇒

 5.1. Size:542K  ncepower
 nceap020n85ll.pdf pdf_icon

NCEAP020N10LL

NCEAP020N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =295A DS D uniquely optimized to provide the most efficient high frequency R =1.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent ga... See More ⇒

 5.2. Size:967K  ncepower
 nceap020n60gu.pdf pdf_icon

NCEAP020N10LL

http //www.ncepower.com NCEAP020N60GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate ... See More ⇒

 7.1. Size:793K  ncepower
 nceap023n10ll.pdf pdf_icon

NCEAP020N10LL

NCEAP023N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =300A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM... See More ⇒

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Detailed specifications: NCEAP016N60VD, NCEAP016N85LL, NCEAP0178AK, NCEAP018N60AGU, NCEAP018N60GU, NCEAP018N85LL, NCEAP01ND35AG, NCEAP01P35AK, AO3407, NCEAP020N85LL, NCEAP023N10LL, NCEAP025N60AG, NCEAP026N10T, NCEAP028N85D, NCEAP030N85LL, NCEAP035N85GU, NCEAP15ND10AG

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