NCEAP020N10LL - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEAP020N10LL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 400 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 330 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 1500 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: TOLL
Аналог (замена) для NCEAP020N10LL
NCEAP020N10LL Datasheet (PDF)
nceap020n10ll.pdf
NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g
nceap020n85ll.pdf
NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga
nceap020n60gu.pdf
http://www.ncepower.comNCEAP020N60GUNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230ADS Duniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
nceap023n10ll.pdf
NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM
Другие MOSFET... NCEAP016N60VD , NCEAP016N85LL , NCEAP0178AK , NCEAP018N60AGU , NCEAP018N60GU , NCEAP018N85LL , NCEAP01ND35AG , NCEAP01P35AK , AO3407 , NCEAP020N85LL , NCEAP023N10LL , NCEAP025N60AG , NCEAP026N10T , NCEAP028N85D , NCEAP030N85LL , NCEAP035N85GU , NCEAP15ND10AG .
History: 2SJ316 | SSF53A0E
Список транзисторов
Обновления
MOSFET: AGM425MC | AGM425MA | AGM425M | AGM420MD | AGM420MC | AGM420MBA | AGM420MAP | AGM420MA | AGM418MBP | AGM418M | AGM414MBP | AGM412S | AGM412MPA | AGM412MAP | AGM412D | AGM608C
Popular searches
oc44 transistor datasheet | 2sa1210 | 2sc3792 | mps2907a transistor equivalent | 2sc1626 | b560 transistor | 2sc632a | c3856









