FQB1P50 MOSFET Datasheet: P-Ch, 500V, 1.5A. Full specification with pinout and replacement list

FQB1P50 Specs and Replacement

Type Designator: FQB1P50

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm

Package: TO263 D2PAK

FQB1P50 substitution

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FQB1P50 datasheet

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October 2008 QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially t... See More ⇒

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQB11P06, FQB12P20, FQB19N20, SDD05N70, FQB19N20C, SDD05N04, FQB19N20L, SDD04N65, IRFP064N, FQB22P10, FQB22P10TMF085, FQB25N33TMF085, FQB27P06, FQB30N06L, FQB33N10, SDD04N60, FQB33N10L