All MOSFET. FQB1P50 Datasheet

 

FQB1P50 Datasheet and Replacement


   Type Designator: FQB1P50
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10.5 Ohm
   Package: TO263 D2PAK
 

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FQB1P50 Datasheet (PDF)

 ..1. Size:934K  fairchild semi
 fqb1p50tm fqb1p50 fqi1p50 fqi1p50tu.pdf pdf_icon

FQB1P50

October 2008QFETFQB1P50 / FQI1P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.5A, -500V, RDS(on) = 10.5 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is especially t

 ..2. Size:927K  onsemi
 fqb1p50.pdf pdf_icon

FQB1P50

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQB11P06 , FQB12P20 , FQB19N20 , SDD05N70 , FQB19N20C , SDD05N04 , FQB19N20L , SDD04N65 , IRFP064N , FQB22P10 , FQB22P10TMF085 , FQB25N33TMF085 , FQB27P06 , FQB30N06L , FQB33N10 , SDD04N60 , FQB33N10L .

History: FQB19N20

Keywords - FQB1P50 MOSFET datasheet

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