All MOSFET. NCEAP40ND60AG Datasheet

 

NCEAP40ND60AG Datasheet and Replacement


   Type Designator: NCEAP40ND60AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: DFN5X6-8L
 

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NCEAP40ND60AG Datasheet (PDF)

 ..1. Size:727K  ncepower
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NCEAP40ND60AG

NCEAP40ND60AGhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65ADS Duniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charge x R produ

 5.1. Size:643K  ncepower
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NCEAP40ND60AG

NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p

 5.2. Size:693K  ncepower
 nceap40nd40g.pdf pdf_icon

NCEAP40ND60AG

http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi

 5.3. Size:676K  ncepower
 nceap40nd80g.pdf pdf_icon

NCEAP40ND60AG

http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(

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Datasheet: NCEAP30T17GU , NCEAP4040Q , NCEAP4045AGU , NCEAP4045GU , NCEAP4065QU , NCEAP4090AGU , NCEAP40ND40AG , NCEAP40ND40G , IRF9640 , NCEAP40ND80AG , NCEAP40ND80G , NCEAP40P60G , NCEAP40P60K , NCEAP40P80G , NCEAP40P80K , NCEAP40PT12K , NCEAP40PT15D .

Keywords - NCEAP40ND60AG MOSFET datasheet

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