NCEAP40ND60AG. Аналоги и основные параметры
Наименование производителя: NCEAP40ND60AG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 72 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 520 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0096 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEAP40ND60AG
- подборⓘ MOSFET транзистора по параметрам
NCEAP40ND60AG даташит
nceap40nd60ag.pdf
NCEAP40ND60AG http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65A DS D uniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excellent gate charge x R produ
nceap40nd80ag.pdf
NCEAP40ND80AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R p
nceap40nd40g.pdf
http //www.ncepower.com NCEAP40ND40G NCE Automotive N-Channel Super Trench Power MOSFET General Features Description V =40V,I =43A DS D The NCEAP40ND40G uses Super Trench technology that is R =8.2m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =10.4m (typical) @ V =4.5V DS(ON) GS switching performance. Both conduction and swi
nceap40nd80g.pdf
http //www.ncepower.com NCEAP40ND80G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80G uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5V DS(
Другие IGBT... NCEAP30T17GU, NCEAP4040Q, NCEAP4045AGU, NCEAP4045GU, NCEAP4065QU, NCEAP4090AGU, NCEAP40ND40AG, NCEAP40ND40G, K2611, NCEAP40ND80AG, NCEAP40ND80G, NCEAP40P60G, NCEAP40P60K, NCEAP40P80G, NCEAP40P80K, NCEAP40PT12K, NCEAP40PT15D
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