NCEAP40ND60AG - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEAP40ND60AG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 72 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 520 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0096 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEAP40ND60AG
NCEAP40ND60AG Datasheet (PDF)
nceap40nd60ag.pdf
NCEAP40ND60AGhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65ADS Duniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charge x R produ
nceap40nd80ag.pdf
NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p
nceap40nd40g.pdf
http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi
nceap40nd80g.pdf
http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(
Другие MOSFET... NCEAP30T17GU , NCEAP4040Q , NCEAP4045AGU , NCEAP4045GU , NCEAP4065QU , NCEAP4090AGU , NCEAP40ND40AG , NCEAP40ND40G , K2611 , NCEAP40ND80AG , NCEAP40ND80G , NCEAP40P60G , NCEAP40P60K , NCEAP40P80G , NCEAP40P80K , NCEAP40PT12K , NCEAP40PT15D .
History: SQR50N04-3M8 | 60N06G-TA3-T | APT60M80L2VR | SQP90P06-07L | AP18N20GJ-HF | APT60M75JLL | CMPDM7002AG
History: SQR50N04-3M8 | 60N06G-TA3-T | APT60M80L2VR | SQP90P06-07L | AP18N20GJ-HF | APT60M75JLL | CMPDM7002AG
Список транзисторов
Обновления
MOSFET: AGM608C | AGM6080D | AGM6080C | AGM6070A | AGM606S | AGM605Q | AGM605F | AGM605C | AGM605A | AGM603F | AGM603D | AGM603C | AGM6035F | AGM6035A | AGM602C | AGM40P75D
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