NCEAP40P60G Specs and Replacement

Type Designator: NCEAP40P60G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: DFN5X6-8L

NCEAP40P60G substitution

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NCEAP40P60G datasheet

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NCEAP40P60G

http //www.ncepower.com NCEAP40P60G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68A DS D optimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are minimized R =12.5m ... See More ⇒

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NCEAP40P60G

http //www.ncepower.com NCEAP40P60K NCE P-Channel Super Trench Power MOSFET General Features Description V =-40V,I =-73A DS D The NCEAP40P60K uses Super Trench technology that is R =8.8m (typical) @ V =-10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =12.5m (typical) @ V =-4.5V DS(ON) GS switching performance. Both conduction and switching po... See More ⇒

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NCEAP40P60G

http //www.ncepower.com NCEAP40PT15G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V... See More ⇒

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 nceap40p80k.pdf pdf_icon

NCEAP40P60G

http //www.ncepower.com NCEAP40P80K NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency swit... See More ⇒

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Detailed specifications: NCEAP4045GU, NCEAP4065QU, NCEAP4090AGU, NCEAP40ND40AG, NCEAP40ND40G, NCEAP40ND60AG, NCEAP40ND80AG, NCEAP40ND80G, MMIS60R580P, NCEAP40P60K, NCEAP40P80G, NCEAP40P80K, NCEAP40PT12K, NCEAP40PT15D, NCEAP40PT15G, NCEAP40T11AG, NCEAP40T11AK

Keywords - NCEAP40P60G MOSFET specs

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