Справочник MOSFET. NCEAP40P60G

 

NCEAP40P60G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEAP40P60G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 68 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 660 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для NCEAP40P60G

 

 

NCEAP40P60G Datasheet (PDF)

 ..1. Size:772K  ncepower
 nceap40p60g.pdf

NCEAP40P60G NCEAP40P60G

http://www.ncepower.comNCEAP40P60GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68ADS Doptimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are minimized R =12.5m

 4.1. Size:482K  ncepower
 nceap40p60k.pdf

NCEAP40P60G NCEAP40P60G

http://www.ncepower.comNCEAP40P60KNCE P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-40V,I =-73ADS DThe NCEAP40P60K uses Super Trench technology that isR =8.8m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =12.5m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and switching po

 6.1. Size:676K  ncepower
 nceap40pt15g.pdf

NCEAP40P60G NCEAP40P60G

http://www.ncepower.com NCEAP40PT15GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V

 6.2. Size:907K  ncepower
 nceap40p80k.pdf

NCEAP40P60G NCEAP40P60G

http://www.ncepower.comNCEAP40P80KNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP40P80K uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency swit

 6.3. Size:703K  ncepower
 nceap40pt12k.pdf

NCEAP40P60G NCEAP40P60G

http://www.ncepower.com NCEAP40PT12KNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =5.9m (t

 6.4. Size:697K  ncepower
 nceap40pt15d.pdf

NCEAP40P60G NCEAP40P60G

http://www.ncepower.comNCEAP40PT15DNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5

 6.5. Size:674K  ncepower
 nceap40p80g.pdf

NCEAP40P60G NCEAP40P60G

http://www.ncepower.comNCEAP40P80GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80ADS Doptimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are R =9.0m (typical)

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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