NCEAP40P80K MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEAP40P80K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 95 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 880 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-252
NCEAP40P80K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEAP40P80K Datasheet (PDF)
nceap40p80k.pdf
http://www.ncepower.comNCEAP40P80KNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP40P80K uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency swit
nceap40p80g.pdf
http://www.ncepower.comNCEAP40P80GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80ADS Doptimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are R =9.0m (typical)
nceap40p60g.pdf
http://www.ncepower.comNCEAP40P60GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68ADS Doptimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are minimized R =12.5m
nceap40pt15g.pdf
http://www.ncepower.com NCEAP40PT15GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V
nceap40pt12k.pdf
http://www.ncepower.com NCEAP40PT12KNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =5.9m (t
nceap40p60k.pdf
http://www.ncepower.comNCEAP40P60KNCE P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-40V,I =-73ADS DThe NCEAP40P60K uses Super Trench technology that isR =8.8m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =12.5m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and switching po
nceap40pt15d.pdf
http://www.ncepower.comNCEAP40PT15DNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AON7446 | SVT044R5NL5 | IRF9640LPBF | SVSP35NF65P7D3
History: AON7446 | SVT044R5NL5 | IRF9640LPBF | SVSP35NF65P7D3
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918