NCEAP40P80K. Аналоги и основные параметры

Наименование производителя: NCEAP40P80K

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 95 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 880 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm

Тип корпуса: TO-252

Аналог (замена) для NCEAP40P80K

- подборⓘ MOSFET транзистора по параметрам

 

NCEAP40P80K даташит

 ..1. Size:907K  ncepower
 nceap40p80k.pdf pdf_icon

NCEAP40P80K

http //www.ncepower.com NCEAP40P80K NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency swit

 4.1. Size:674K  ncepower
 nceap40p80g.pdf pdf_icon

NCEAP40P80K

http //www.ncepower.com NCEAP40P80G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80A DS D optimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are R =9.0m (typical)

 6.1. Size:772K  ncepower
 nceap40p60g.pdf pdf_icon

NCEAP40P80K

http //www.ncepower.com NCEAP40P60G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68A DS D optimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are minimized R =12.5m

 6.2. Size:676K  ncepower
 nceap40pt15g.pdf pdf_icon

NCEAP40P80K

http //www.ncepower.com NCEAP40PT15G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V

ПОКАЗАТЬ ЕЩЁ

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