NCEAP40PT15G
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEAP40PT15G
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 180
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8
V
|Id|ⓘ - Maximum Drain Current: 160
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 104.4
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 1900
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
DFN5X6-8L
NCEAP40PT15G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEAP40PT15G
Datasheet (PDF)
..1. Size:676K ncepower
nceap40pt15g.pdf 
http://www.ncepower.com NCEAP40PT15GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V
3.1. Size:697K ncepower
nceap40pt15d.pdf
http://www.ncepower.comNCEAP40PT15DNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5
4.1. Size:703K ncepower
nceap40pt12k.pdf
http://www.ncepower.com NCEAP40PT12KNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =5.9m (t
6.1. Size:772K ncepower
nceap40p60g.pdf
http://www.ncepower.comNCEAP40P60GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68ADS Doptimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are minimized R =12.5m
6.2. Size:907K ncepower
nceap40p80k.pdf
http://www.ncepower.comNCEAP40P80KNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP40P80K uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency swit
6.3. Size:482K ncepower
nceap40p60k.pdf
http://www.ncepower.comNCEAP40P60KNCE P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-40V,I =-73ADS DThe NCEAP40P60K uses Super Trench technology that isR =8.8m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =12.5m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and switching po
6.4. Size:674K ncepower
nceap40p80g.pdf
http://www.ncepower.comNCEAP40P80GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80ADS Doptimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are R =9.0m (typical)
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
