NCEAP40PT15G. Аналоги и основные параметры

Наименование производителя: NCEAP40PT15G

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 180 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 1900 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEAP40PT15G

- подборⓘ MOSFET транзистора по параметрам

 

NCEAP40PT15G даташит

 ..1. Size:676K  ncepower
 nceap40pt15g.pdf pdf_icon

NCEAP40PT15G

http //www.ncepower.com NCEAP40PT15G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V

 3.1. Size:697K  ncepower
 nceap40pt15d.pdf pdf_icon

NCEAP40PT15G

http //www.ncepower.com NCEAP40PT15D NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5

 4.1. Size:703K  ncepower
 nceap40pt12k.pdf pdf_icon

NCEAP40PT15G

http //www.ncepower.com NCEAP40PT12K NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.9m (t

 6.1. Size:772K  ncepower
 nceap40p60g.pdf pdf_icon

NCEAP40PT15G

http //www.ncepower.com NCEAP40P60G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68A DS D optimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are minimized R =12.5m

ПОКАЗАТЬ ЕЩЁ

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