All MOSFET. NCEAP40T11AG Datasheet

 

NCEAP40T11AG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEAP40T11AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 38.5 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: PDFN5X6-8L

 NCEAP40T11AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEAP40T11AG Datasheet (PDF)

 ..1. Size:918K  ncepower
 nceap40t11ag.pdf

NCEAP40T11AG NCEAP40T11AG

http://www.ncepower.comNCEAP40T11AGNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell

 3.1. Size:897K  ncepower
 nceap40t11ak.pdf

NCEAP40T11AG NCEAP40T11AG

NCEAP40T11AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq

 4.1. Size:543K  ncepower
 nceap40t11g.pdf

NCEAP40T11AG NCEAP40T11AG

http://www.ncepower.comNCEAP40T11GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T11G uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.3m

 4.2. Size:637K  ncepower
 nceap40t11k.pdf

NCEAP40T11AG NCEAP40T11AG

NCEAP40T11Khttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11K uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q . ThisDS(ON) gdevice is ideal for high-freq

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: UT20N03G-K08-5060-R | SML5040AN | FDMD8540L | SI4N60-TN3-T | 2SK2089 | TSF9N90M | PSMN4R0-25YLC

 

 
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