NCEAP40T11AG - описание и поиск аналогов

 

NCEAP40T11AG - Аналоги. Основные параметры


   Наименование производителя: NCEAP40T11AG
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 3.5 ns
   Cossⓘ - Выходная емкость: 850 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0029 Ohm
   Тип корпуса: PDFN5X6-8L
 

 Аналог (замена) для NCEAP40T11AG

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEAP40T11AG технические параметры

 ..1. Size:918K  ncepower
 nceap40t11ag.pdf pdf_icon

NCEAP40T11AG

http //www.ncepower.com NCEAP40T11AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell

 3.1. Size:897K  ncepower
 nceap40t11ak.pdf pdf_icon

NCEAP40T11AG

NCEAP40T11AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq

 4.1. Size:543K  ncepower
 nceap40t11g.pdf pdf_icon

NCEAP40T11AG

 4.2. Size:637K  ncepower
 nceap40t11k.pdf pdf_icon

NCEAP40T11AG

NCEAP40T11K http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This DS(ON) g device is ideal for high-freq

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEAP40ND80G , NCEAP40P60G , NCEAP40P60K , NCEAP40P80G , NCEAP40P80K , NCEAP40PT12K , NCEAP40PT15D , NCEAP40PT15G , IRFZ44N , NCEAP40T11AK , NCEAP40T11G , NCEAP40T11K , NCEAP40T13AGU , NCEAP40T14AK , NCEAP40T14G , NCEAP40T15AGU , NCEAP40T15GU .

History: IPB120N04S4-04

 

 
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