All MOSFET. NCEP016N60VD Datasheet

 

NCEP016N60VD Datasheet and Replacement


   Type Designator: NCEP016N60VD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 305 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 1647 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO-263-7L
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NCEP016N60VD Datasheet (PDF)

 ..1. Size:955K  ncepower
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NCEP016N60VD

NCEP016N60VDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =305ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

 6.1. Size:803K  ncepower
ncep016n10ll.pdf pdf_icon

NCEP016N60VD

Pb Free ProductNCEP016N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =385ADS Dswitching performance. Both conduction and switching power R =1.2m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem

 6.2. Size:821K  ncepower
ncep016n85ll.pdf pdf_icon

NCEP016N60VD

Pb Free ProductNCEP016N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =360ADS Dswitching performance. Both conduction and switching power R =1.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extrem

 7.1. Size:390K  ncepower
ncep0160ag.pdf pdf_icon

NCEP016N60VD

http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FCB20N60F085 | IRLU9343PBF | 2SK3437 | 2SJ148 | IRFU3709ZC | 15NM70L-TF34-T | VST012N06MS

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