All MOSFET. NCEP016N60VD Datasheet

 

NCEP016N60VD MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP016N60VD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 305 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 141 nC
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 1647 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO-263-7L

 NCEP016N60VD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP016N60VD Datasheet (PDF)

 ..1. Size:955K  ncepower
 ncep016n60vd.pdf

NCEP016N60VD NCEP016N60VD

NCEP016N60VDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =305ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

 6.1. Size:803K  ncepower
 ncep016n10ll.pdf

NCEP016N60VD NCEP016N60VD

Pb Free ProductNCEP016N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =385ADS Dswitching performance. Both conduction and switching power R =1.2m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem

 6.2. Size:821K  ncepower
 ncep016n85ll.pdf

NCEP016N60VD NCEP016N60VD

Pb Free ProductNCEP016N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =360ADS Dswitching performance. Both conduction and switching power R =1.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extrem

 7.1. Size:390K  ncepower
 ncep0160ag.pdf

NCEP016N60VD NCEP016N60VD

http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 7.2. Size:428K  ncepower
 ncep0160a.pdf

NCEP016N60VD NCEP016N60VD

Pb Free Producthttp://www.ncepower.com NCEP0160ANCE N-Channel Super Trench Power MOSFET Description The NCEP0160A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sche

 7.3. Size:432K  ncepower
 ncep0160.pdf

NCEP016N60VD NCEP016N60VD

http://www.ncepower.com NCEP0160NCE N-Channel Super Trench Power MOSFET Description The NCEP0160 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 7.4. Size:333K  ncepower
 ncep0160g.pdf

NCEP016N60VD NCEP016N60VD

http://www.ncepower.com NCEP0160GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP0160G uses Super Trench technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high RDS(ON)

 7.5. Size:449K  ncepower
 ncep0160f.pdf

NCEP016N60VD NCEP016N60VD

Pb Free Producthttp://www.ncepower.com NCEP0160FNCE N-Channel Super Trench Power MOSFET Description The NCEP0160F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE6005AN | FQB17N08TM

 

 
Back to Top