Справочник MOSFET. NCEP016N60VD

 

NCEP016N60VD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP016N60VD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 305 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 1647 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0016 Ohm
   Тип корпуса: TO-263-7L
     - подбор MOSFET транзистора по параметрам

 

NCEP016N60VD Datasheet (PDF)

 ..1. Size:955K  ncepower
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NCEP016N60VD

NCEP016N60VDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =305ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

 6.1. Size:803K  ncepower
ncep016n10ll.pdfpdf_icon

NCEP016N60VD

Pb Free ProductNCEP016N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =385ADS Dswitching performance. Both conduction and switching power R =1.2m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem

 6.2. Size:821K  ncepower
ncep016n85ll.pdfpdf_icon

NCEP016N60VD

Pb Free ProductNCEP016N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =360ADS Dswitching performance. Both conduction and switching power R =1.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extrem

 7.1. Size:390K  ncepower
ncep0160ag.pdfpdf_icon

NCEP016N60VD

http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SI9435DY-T1 | SKI04024

 

 
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