All MOSFET. NCEP018N60 Datasheet

 

NCEP018N60 Datasheet and Replacement


   Type Designator: NCEP018N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 1647 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-220
 

 NCEP018N60 substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCEP018N60 Datasheet (PDF)

 ..1. Size:686K  ncepower
 ncep018n60 ncep018n60d.pdf pdf_icon

NCEP018N60

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

 ..2. Size:686K  ncepower
 ncep018n60.pdf pdf_icon

NCEP018N60

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

 0.1. Size:1129K  ncepower
 ncep018n60agu.pdf pdf_icon

NCEP018N60

NCEP018N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60AGU uses Super Trench II technology that V =60V,I =195ADS Dis uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5VDS(ON) GSswitchi

 0.2. Size:686K  ncepower
 ncep018n60d.pdf pdf_icon

NCEP018N60

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

SHOW MORE

Datasheet: NCEP016N60VD , NCEP016N85LL , NCEP0178 , NCEP0178AL , NCEP0178D , NCEP0178F , NCEP018N10LL , NCEP018N30GU , 20N50 , NCEP018N60AGU , NCEP018N60D , NCEP018N60GU , NCEP0190G , NCEP019N10T , NCEP01P35A , NCEP01P35AG , NCEP01P35AK .

History: BLP022N10-BA | CS8N60FA9H

Keywords - NCEP018N60 MOSFET datasheet

 NCEP018N60 cross reference
 NCEP018N60 equivalent finder
 NCEP018N60 lookup
 NCEP018N60 substitution
 NCEP018N60 replacement

 

 
Back to Top

 


 
.