Справочник MOSFET. NCEP018N60

 

NCEP018N60 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP018N60
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 255 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 1647 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCEP018N60

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP018N60 Datasheet (PDF)

 ..1. Size:686K  ncepower
 ncep018n60 ncep018n60d.pdf pdf_icon

NCEP018N60

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

 ..2. Size:686K  ncepower
 ncep018n60.pdf pdf_icon

NCEP018N60

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

 0.1. Size:1129K  ncepower
 ncep018n60agu.pdf pdf_icon

NCEP018N60

NCEP018N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP018N60AGU uses Super Trench II technology that V =60V,I =195ADS Dis uniquely optimized to provide the most efficient high R =1.4 m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =1.8 m (typical) @ V =4.5VDS(ON) GSswitchi

 0.2. Size:686K  ncepower
 ncep018n60d.pdf pdf_icon

NCEP018N60

NCEP018N60,NCEP018N60DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =60V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical (TO-220) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.5m , typical (TO-263) @ V =

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP016N60VD , NCEP016N85LL , NCEP0178 , NCEP0178AL , NCEP0178D , NCEP0178F , NCEP018N10LL , NCEP018N30GU , IRF1407 , NCEP018N60AGU , NCEP018N60D , NCEP018N60GU , NCEP0190G , NCEP019N10T , NCEP01P35A , NCEP01P35AG , NCEP01P35AK .

History: 2SK3926-01MR | HM4616A | SI3446ADV | 4N60KL-TN3-R | IRF1902 | BUK7K5R6-30E | STW28NK60Z

 

 
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