All MOSFET. NCEP01T18VD Datasheet

 

NCEP01T18VD Datasheet and Replacement


   Type Designator: NCEP01T18VD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 189 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 1480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO-263-7L
 

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NCEP01T18VD Datasheet (PDF)

 ..1. Size:396K  ncepower
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NCEP01T18VD

http://www.ncepower.com NCEP01T18VDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 5.1. Size:323K  ncepower
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NCEP01T18VD

Pb Free Producthttp://www.ncepower.com NCEP01T18DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:345K  ncepower
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NCEP01T18VD

Pb Free Producthttp://www.ncepower.com NCEP01T18NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.3. Size:323K  ncepower
 ncep01t18t.pdf pdf_icon

NCEP01T18VD

Pb Free Producthttp://www.ncepower.com NCEP01T18TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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Datasheet: NCEP01P60G , NCEP01T10G , NCEP01T11D , NCEP01T12D , NCEP01T13B , NCEP01T13BD , NCEP01T13LL , NCEP01T18D , IRF830 , NCEP01T25LL , NCEP01T25T , NCEP01T30T , NCEP020N10LL , NCEP020N30BQU , NCEP020N30QU , NCEP020N60AGU , NCEP020N60GU .

History: GSM2319A | 2SK3034 | AONS66524 | FQU20N06TU | AP20T15GP-HF

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