Справочник MOSFET. NCEP01T18VD

 

NCEP01T18VD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP01T18VD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 189 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 75 ns
   Cossⓘ - Выходная емкость: 1480 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TO-263-7L

 Аналог (замена) для NCEP01T18VD

 

 

NCEP01T18VD Datasheet (PDF)

 ..1. Size:396K  ncepower
 ncep01t18vd.pdf

NCEP01T18VD NCEP01T18VD

http://www.ncepower.com NCEP01T18VDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 5.1. Size:323K  ncepower
 ncep01t18d.pdf

NCEP01T18VD NCEP01T18VD

Pb Free Producthttp://www.ncepower.com NCEP01T18DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.2. Size:345K  ncepower
 ncep01t18.pdf

NCEP01T18VD NCEP01T18VD

Pb Free Producthttp://www.ncepower.com NCEP01T18NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 5.3. Size:323K  ncepower
 ncep01t18t.pdf

NCEP01T18VD NCEP01T18VD

Pb Free Producthttp://www.ncepower.com NCEP01T18TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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