NCEP0218K Datasheet. Specs and Replacement

Type Designator: NCEP0218K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: TO-252

NCEP0218K substitution

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NCEP0218K datasheet

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NCEP0218K

http //www.ncepower.com NCEP0218K NCE N-Channel Super Trench Power MOSFET Description The NCEP0218K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching... See More ⇒

 6.1. Size:398K  ncepower
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NCEP0218K

http //www.ncepower.com NCEP0218G NCE N-Channel Super Trench Power MOSFET Description The NCEP0218G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =18A frequency switching performance. Both conduction and RDS(ON)=70m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com... See More ⇒

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NCEP0218K

http //www.ncepower.com NCEP0212F NCE N-Channel Super Trench Power MOSFET Description The NCEP0212F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch... See More ⇒

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NCEP0218K

http //www.ncepower.com NCEP0210Q NCE N-Channel Super Trench Power MOSFET Description The NCEP0210Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =10A frequency switching performance. Both conduction and RDS(ON)=145m (typical) @ VGS=10V switching power losses are minimized due to an extremely low co... See More ⇒

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Detailed specifications: NCEP020N60GU, NCEP020N85, NCEP020N85D, NCEP020N85LL, NCEP020N85T, NCEP0210Q, NCEP0212F, NCEP0218G, K2611, NCEP0220F, NCEP0225F, NCEP0225G, NCEP0225K, NCEP0230D, NCEP023N10T, NCEP023N85M, NCEP023N85T

Keywords - NCEP0218K MOSFET specs

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