NCEP0218K - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP0218K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 42 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.155 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCEP0218K
NCEP0218K Datasheet (PDF)
ncep0218k.pdf

http://www.ncepower.com NCEP0218KNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP0218K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching
ncep0218g.pdf

http://www.ncepower.com NCEP0218GNCE N-Channel Super Trench Power MOSFET Description The NCEP0218G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =18A frequency switching performance. Both conduction and RDS(ON)=70m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep0212f.pdf

http://www.ncepower.com NCEP0212FNCE N-Channel Super Trench Power MOSFET Description The NCEP0212F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep0210q.pdf

http://www.ncepower.com NCEP0210QNCE N-Channel Super Trench Power MOSFET Description The NCEP0210Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =10A frequency switching performance. Both conduction and RDS(ON)=145m (typical) @ VGS=10V switching power losses are minimized due to an extremely low co
Другие MOSFET... NCEP020N60GU , NCEP020N85 , NCEP020N85D , NCEP020N85LL , NCEP020N85T , NCEP0210Q , NCEP0212F , NCEP0218G , IRF9640 , NCEP0220F , NCEP0225F , NCEP0225G , NCEP0225K , NCEP0230D , NCEP023N10T , NCEP023N85M , NCEP023N85T .
History: FMW47N60S1HF
History: FMW47N60S1HF



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