Справочник MOSFET. NCEP0218K

 

NCEP0218K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP0218K
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 140 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 18 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 9.2 nC
   Время нарастания (tr): 5 ns
   Выходная емкость (Cd): 42 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.155 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для NCEP0218K

 

 

NCEP0218K Datasheet (PDF)

 ..1. Size:1012K  ncepower
 ncep0218k.pdf

NCEP0218K NCEP0218K

http://www.ncepower.com NCEP0218KNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP0218K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching

 6.1. Size:398K  ncepower
 ncep0218g.pdf

NCEP0218K NCEP0218K

http://www.ncepower.com NCEP0218GNCE N-Channel Super Trench Power MOSFET Description The NCEP0218G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =18A frequency switching performance. Both conduction and RDS(ON)=70m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 7.1. Size:315K  ncepower
 ncep0212f.pdf

NCEP0218K NCEP0218K

http://www.ncepower.com NCEP0212FNCE N-Channel Super Trench Power MOSFET Description The NCEP0212F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 7.2. Size:360K  ncepower
 ncep0210q.pdf

NCEP0218K NCEP0218K

http://www.ncepower.com NCEP0210QNCE N-Channel Super Trench Power MOSFET Description The NCEP0210Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =10A frequency switching performance. Both conduction and RDS(ON)=145m (typical) @ VGS=10V switching power losses are minimized due to an extremely low co

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