All MOSFET. NCEP025N60AG Datasheet

 

NCEP025N60AG Datasheet and Replacement


   Type Designator: NCEP025N60AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 165 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 105 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: DFN5X6-8L
 

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NCEP025N60AG Datasheet (PDF)

 ..1. Size:748K  ncepower
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NCEP025N60AG

http://www.ncepower.com NCEP025N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP025N60AG uses Super Trench II technology that is V =60V,I =165ADS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5VDS(ON)

 4.1. Size:1320K  ncepower
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NCEP025N60AG

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

 4.2. Size:1320K  ncepower
 ncep025n60 ncep025n60d.pdf pdf_icon

NCEP025N60AG

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

 4.3. Size:333K  ncepower
 ncep025n60g.pdf pdf_icon

NCEP025N60AG

http://www.ncepower.com NCEP025N60GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

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Datasheet: NCEP02590 , NCEP02590D , NCEP02590T , NCEP025F90D , NCEP025F90T , NCEP025N12LL , NCEP025N30G , NCEP025N60 , IRF630 , NCEP025N60D , NCEP025N60G , NCEP025N85LL , NCEP0260 , NCEP0260D , NCEP026N10 , NCEP026N10D , NCEP026N10F .

History: MSAFX40N30A | PT676BA | HFS730 | IRHM7360 | PTP20N60A | NCE0157A2 | FTK4828F

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