NCEP025N60AG datasheet, аналоги, основные параметры

Наименование производителя: NCEP025N60AG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 200 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 165 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 900 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP025N60AG

- подборⓘ MOSFET транзистора по параметрам

 

NCEP025N60AG даташит

 ..1. Size:748K  ncepower
 ncep025n60ag.pdf pdf_icon

NCEP025N60AG

http //www.ncepower.com NCEP025N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60AG uses Super Trench II technology that is V =60V,I =165A DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5V DS(ON)

 4.1. Size:1320K  ncepower
 ncep025n60.pdf pdf_icon

NCEP025N60AG

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely

 4.2. Size:1320K  ncepower
 ncep025n60 ncep025n60d.pdf pdf_icon

NCEP025N60AG

NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely

 4.3. Size:333K  ncepower
 ncep025n60g.pdf pdf_icon

NCEP025N60AG

http //www.ncepower.com NCEP025N60G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

ПОКАЗАТЬ ЕЩЁ

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