NCEP026N10 Datasheet. Specs and Replacement

Type Designator: NCEP026N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO-220

NCEP026N10 substitution

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NCEP026N10 datasheet

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NCEP026N10

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

 ..2. Size:683K  ncepower
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NCEP026N10

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

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NCEP026N10

NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ... See More ⇒

 0.2. Size:683K  ncepower
 ncep026n10d.pdf pdf_icon

NCEP026N10

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

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Detailed specifications: NCEP025N30G, NCEP025N60, NCEP025N60AG, NCEP025N60D, NCEP025N60G, NCEP025N85LL, NCEP0260, NCEP0260D, AON6414A, NCEP026N10D, NCEP026N10F, NCEP026N10LL, NCEP026N10M, NCEP026N10T, NCEP026N85, NCEP026N85D, NCEP028N12LL

Keywords - NCEP026N10 MOSFET specs

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