NCEP026N10 datasheet, аналоги, основные параметры

Наименование производителя: NCEP026N10

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27 ns

Cossⓘ - Выходная емкость: 1100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm

Тип корпуса: TO-220

Аналог (замена) для NCEP026N10

- подборⓘ MOSFET транзистора по параметрам

 

NCEP026N10 даташит

 ..1. Size:683K  ncepower
 ncep026n10 ncep026n10d.pdf pdf_icon

NCEP026N10

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 ..2. Size:683K  ncepower
 ncep026n10.pdf pdf_icon

NCEP026N10

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 0.1. Size:352K  ncepower
 ncep026n10m.pdf pdf_icon

NCEP026N10

NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an

 0.2. Size:683K  ncepower
 ncep026n10d.pdf pdf_icon

NCEP026N10

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

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