NCEP026N10LL Datasheet. Specs and Replacement
Type Designator: NCEP026N10LL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 360 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 280 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 1050 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TOLL
NCEP026N10LL substitution
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NCEP026N10LL datasheet
ncep026n10ll.pdf
NCEP026N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat... See More ⇒
ncep026n10m.pdf
NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ... See More ⇒
ncep026n10d.pdf
NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒
ncep026n10t.pdf
NCEP026N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =230A DS D switching performance. Both conduction and switching power R =2.15m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinat... See More ⇒
Detailed specifications: NCEP025N60D, NCEP025N60G, NCEP025N85LL, NCEP0260, NCEP0260D, NCEP026N10, NCEP026N10D, NCEP026N10F, P55NF06, NCEP026N10M, NCEP026N10T, NCEP026N85, NCEP026N85D, NCEP028N12LL, NCEP028N60AGU, NCEP029N10, NCEP029N10D
Keywords - NCEP026N10LL MOSFET specs
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History: NCEP026N10
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