Справочник MOSFET. NCEP026N10LL

 

NCEP026N10LL Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP026N10LL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 360 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 280 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 38 ns
   Cossⓘ - Выходная емкость: 1050 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TOLL
 

 Аналог (замена) для NCEP026N10LL

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP026N10LL Datasheet (PDF)

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NCEP026N10LL

NCEP026N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat

 4.1. Size:352K  ncepower
 ncep026n10m.pdf pdf_icon

NCEP026N10LL

NCEP026N10M, NCEP026N10MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an

 4.2. Size:683K  ncepower
 ncep026n10d.pdf pdf_icon

NCEP026N10LL

NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.3. Size:1504K  ncepower
 ncep026n10t.pdf pdf_icon

NCEP026N10LL

NCEP026N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =230ADS Dswitching performance. Both conduction and switching powerR =2.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP025N60D , NCEP025N60G , NCEP025N85LL , NCEP0260 , NCEP0260D , NCEP026N10 , NCEP026N10D , NCEP026N10F , IRFB4115 , NCEP026N10M , NCEP026N10T , NCEP026N85 , NCEP026N85D , NCEP028N12LL , NCEP028N60AGU , NCEP029N10 , NCEP029N10D .

History: NTD3055-094-1

 

 
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