NCEP02T11T Datasheet. Specs and Replacement
Type Designator: NCEP02T11T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 450.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: TO-247
NCEP02T11T substitution
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NCEP02T11T datasheet
ncep02t11t.pdf
http //www.ncepower.com NCEP02T11T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T11T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
ncep02t11d.pdf
http //www.ncepower.com NCEP02T11D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Schematic diagram... See More ⇒
ncep02t10t.pdf
http //www.ncepower.com NCEP02T10T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch... See More ⇒
ncep02t10d.pdf
Pb Free Product http //www.ncepower.com NCEP02T10D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
Detailed specifications: NCEP028N12LL, NCEP028N60AGU, NCEP029N10, NCEP029N10D, NCEP02T10, NCEP02T10LL, NCEP02T10T, NCEP02T11D, AO3401, NCEP030N12, NCEP030N12D, NCEP030N30GU, NCEP030N60AGU, NCEP030N85GU, NCEP030N85LL, NCEP031N85M, NCEP033N10
Keywords - NCEP02T11T MOSFET specs
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History: QM3809M6
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