NCEP02T11T datasheet, аналоги, основные параметры

Наименование производителя: NCEP02T11T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 330 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 28 ns

Cossⓘ - Выходная емкость: 450.6 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm

Тип корпуса: TO-247

Аналог (замена) для NCEP02T11T

- подборⓘ MOSFET транзистора по параметрам

 

NCEP02T11T даташит

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 ncep02t11t.pdf pdf_icon

NCEP02T11T

http //www.ncepower.com NCEP02T11T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T11T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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 ncep02t11d.pdf pdf_icon

NCEP02T11T

http //www.ncepower.com NCEP02T11D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Schematic diagram

 6.1. Size:1131K  ncepower
 ncep02t10t.pdf pdf_icon

NCEP02T11T

http //www.ncepower.com NCEP02T10T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch

 6.2. Size:322K  ncepower
 ncep02t10d.pdf pdf_icon

NCEP02T11T

Pb Free Product http //www.ncepower.com NCEP02T10D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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